Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs

Author:

Deng Shan1ORCID,Zhao Zijian1,Kim You Sung2,Duenkel Stefan2,MacMahon David3,Tiwari Ravi4ORCID,Choudhury Nilotpal4ORCID,Beyer Sven2,Gong Xiao5ORCID,Kurinec Santosh6ORCID,Ni Kai6ORCID

Affiliation:

1. Microsystems Engineering Ph.D. Program, Rochester Institute of Technology, Rochester, NY, USA

2. GLOBALFOUNDRIES Fab1 LLC & Company KG, Dresden, Germany

3. Micron Technology Inc., Manassas, VA, USA

4. Department of Electrical Engineering, Indian Institute of Technology Bombay (IIT Bombay), Mumbai, India

5. Department of Electrical Computer Engineering, National University of Singapore, Singapore

6. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

Funder

Semiconductor Research Corporation (SRC) Global Research Collaboration (GRC) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. First demonstration of BEOL-compatible ferroelectric TCAM featuring a-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 108 cycles;sun;Dig Tech Papers Symp VLSI Technol,2021

2. SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications

3. Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability

4. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

5. Direct observation of interface charge behaviors in FeFET by quasi-static split C-V and Hall techniques: Revealing FeFET operation;toprasertpong;IEDM Tech Dig,2019

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