The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an, China
Funder
National Natural Science Foundation of China
China National Postdoctoral Program for Innovative Talents
China Postdoctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09791480.pdf?arnumber=9791480
Reference24 articles.
1. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
2. On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy
3. Suppression of iron memory effect in GaN epitaxial layers;leone;Status Solidi B,2017
4. New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor
5. An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate
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1. The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer;Applied Physics Letters;2024-09-02
2. Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications;Journal of Electronic Materials;2024-05-06
3. Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone;Microelectronics Journal;2024-05
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