An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate-Reference-Cited by-同舟云学术

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An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate

Published:2019-11-08 Issue:12 Volume:34 Page:125011
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Soman Rohith^ORCID,Raghavan Srinivasan,Bhat Navakanta

Funder

Ministry of Human Resource Development

Ministry of Electronics and Information technology

Nano Mission Council, Department of Science and Technology

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab5006/pdf

Reference16 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

4. Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

5. In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion;Frontiers in Materials;2023-12-05

2. Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer;Materials;2022-12-14

3. Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN;Nanotechnology;2022-10-04

4. The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer;IEEE Transactions on Electron Devices;2022-08

5. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors;Journal of Physics: Conference Series;2020-12-01

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