Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Shortest wavelength semiconductor laser diode
3. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
4. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
5. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
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