Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Published:2003-01-15 Issue:Part 1, No. 1 Volume:42 Page:50-53
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Xing Huili,Green Daniel S.,Yu Haijiang,Mates Tom,Kozodoy Peter,Keller Stacia,DenBaars Steven P.,Mishra Umesh K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=1R/a=50/pdf

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