A Novel 4H-SiC JBS-Integrated MOSFET With Self-Pinching Structure for Improved Short-Circuit Capability
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University, Changsha, China
2. School of Mechatronic Systems Engineering, Simon Fraser University, Surrey, Canada
Funder
Key Research and Development Program of the Hunan Province
project for upgrading foundational industrial infrastructure
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09839573.pdf?arnumber=9839573
Reference25 articles.
1. Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs
2. Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter
3. Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress
4. Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology
5. Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation
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1. Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects;IEEE Transactions on Power Electronics;2024-10
2. A novel SiC VD-MOSFET with optimized P-type shielding structure in JFET region for improved short circuit robustness;Engineering Research Express;2024-08-22
3. Improved HF-FOM and SC Ruggedness of Split-Gate 4H-SiC MOSFET With P+ Buffer;IEEE Electron Device Letters;2024-07
4. A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance;Micromachines;2024-03-29
5. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18
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