Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter-Reference-Cited by-同舟云学术

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Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Published:2021-08 Issue:4 Volume:9 Page:4299-4310
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Jiang Xi^ORCID,Wang Jun^ORCID,Chen Jianjun,Yu Hengyu^ORCID,Li Zongjian^ORCID,John Shen Z.

Funder

High-level Talent Gathering Project of Hunan Province

Science and Technology Major Project of Hunan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://xplorestaging.ieee.org/ielx7/6245517/9502054/09069947.pdf?arnumber=9069947

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Path Dependence Identification Method for Power MOSFETs Degradation Due to Bias Temperature Instability;IEEE Transactions on Power Electronics;2024-10

2. Investigation on Gate Oxide Degradation of SiC MOSFET in Switching Operation;IEEE Transactions on Power Electronics;2024-08

3. Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs;IEEE Transactions on Power Electronics;2024-05

4. Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs;IEEE Open Journal of Power Electronics;2024

5. Reliability and Condition Monitoring of Sic Power MOSFETs;SSRN Electronic Journal;2024

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