Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs-Reference-Cited by-同舟云学术

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Impact of the Threshold Dispersity Evolution on the Current Sharing of Parallel SiC MOSFETs

Published:2024-05 Issue:5 Volume:39 Page:6312-6326
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Tang Lei¹^ORCID,Jiang Huaping¹^ORCID,Liao Ruijin¹^ORCID,Huang Yihan¹^ORCID,Zhong Xiaohan¹^ORCID,Qi Xiaowei²^ORCID,Liu Li¹^ORCID,Zhang Quan³^ORCID

Affiliation:

1. School of Electrical Engineering, Chongqing University, Chongqing, China

2. Beijing Microelectronics Technology Institute, Beijing, China

3. State Grid Key Laboratory of Power Industrial Chip Reliability Technology, Beijing Smart-Chip Microelectronics Technology Company Ltd., Beijing, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10478433/10443543.pdf?arnumber=10443543

Reference39 articles.

1. Silicon Carbide Power Devices

2. An Active Voltage Balancing Method for Series Connection of SiC MOSFETs With Coupling Inductor

3. Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

4. Current Balancing of Paralleled SiC mosfets for a Resonant Pulsed Power Converter

5. Material science and device physics in SiC technology for high-voltage power devices

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