Accurate Quantum Transport Modeling of High-Speed In<sub>0.53</sub>Ga<sub>0.47</sub>As/AlAs Double-Barrier Resonant Tunneling Diodes-Reference-Cited by-同舟云学术

Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

Published:2022-08 Issue:8 Volume:69 Page:4638-4645
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cimbri Davide¹^ORCID,Yavas-Aydin Begum²^ORCID,Hartmann Fabian²^ORCID,Jabeen Fauzia²,Worschech Lukas²,Hofling Sven²,Wasige Edward¹^ORCID

Affiliation:

1. High-Frequency Electronics Group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering, University of Glasgow, Glasgow, U.K

2. Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, University of Würzburg, Würzburg, Germany

Funder

TeraApps (Doctoral training network in terahertz technologies for imaging, radar, and communication applications) through the European Union’s Horizon 2020 Research and Innovation Program

Marie Skłodowska–Curie Innovative Training Network

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09791098.pdf?arnumber=9791098

Reference43 articles.

1. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

2. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

3. Eight-bandk⋅pmodel of strained zinc-blende crystals

4. Modeling of Sb-based type-II quantum cascade lasers

5. sp3s*Tight-binding parameters for transport simulations in compound semiconductors

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2. Computational design of a (5, 0) CNT-InN nanotube heterojunction as a resonant tunneling diode;Indian Journal of Physics;2023-05-09

3. In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band;2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS);2022-07-04

4. Epitaxial Structure Simulation Study of In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes;2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS);2022-07-04

5. Analytical Physics-Based Compact Current–Voltage Model for 2D-2D Resonant Tunneling Diodes;IEEE Transactions on Nanotechnology;2022