Epitaxial Structure Simulation Study of In<sub>0.53</sub>Ga<sub>0.47</sub>As/AlAs Double-Barrier Resonant Tunnelling Diodes-Reference-Cited by-同舟云学术

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Epitaxial Structure Simulation Study of In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes

Published:2022-07-04 Issue: Volume: Page:
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Container-title:2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
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Author:

Cimbri Davide¹,Wang Jue¹,Wasige Edward¹

Affiliation:

1. University of Glasgow,High-Frequency Electronics Group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering,Glasgow,United Kingdom,G12 8LT

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9832436/9832437/09832441.pdf?arnumber=9832441

Reference11 articles.

1. Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

2. Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

3. Physics of Optoelectronic Devices;chuang,1995

4. Extremely High Peak Current Densities of over 1×106A/cm2in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy

5. Handbook Series on Semiconductor Parameters: Volume 1 and 2;levinshtein;World Scientific,1996

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect;Vacuum;2024-10

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