Optimized Design and Implementation of Double-Barrier Resonant Tunneling Diodes-Reference-Cited by-同舟云学术

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Optimized Design and Implementation of Double-Barrier Resonant Tunneling Diodes

Published:2023-08-31 Issue: Volume: Page:
ISSN:
Container-title:2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
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Author:

Liu Bowen¹,Liu Jun¹,Song Ruiliang¹,Liu Ning¹,Liang Shixiong²,Sun Niefeng²

Affiliation:

1. The 54th Research Institute of China Electronics Technology Group Corporation (CETC54),Beijing Research and Development Center,Beijing,China,100070

2. The 13th Research Institute of China Electronics Technology Group Corporation (CETC13),Shijiazhuang,China,050051

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310306/10310308/10310385.pdf?arnumber=10310385

Reference8 articles.

1. High performance microstrip resonant tunneling diode oscillators as terahertz sources

2. Accurate Quantum Transport Modeling of High-Speed In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunneling Diodes

3. High-Power Operation of Terahertz Oscillators With Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration

4. High Performance Resonant Tunneling Diode Oscillators for THz Applications

5. The road to 100 Gb/s wireless and beyond: basic issues and key directions

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