In<sub>0.53</sub>Ga<sub>0.47</sub>As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band-Reference-Cited by-同舟云学术

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In_0.53Ga_0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 Fifth International Workshop on Mobile Terahertz Systems (IWMTS)
language:
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Author:

Cimbri Davide¹,Morariu Razvan¹,Ofiare Afesomeh¹,Wasige Edward¹

Affiliation:

1. University of Glasgow,High-Frequency Electronics Group, Division of Electronics and Nanoscale Engineering, James Watt School of Engineering,Glasgow,United Kingdom,G12 8LT

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9832436/9832437/09832442.pdf?arnumber=9832442

Reference15 articles.

1. Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times

2. Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes

3. Strain Compensated InGaAs/AlAs Triple Barrier Resonant Tunneling Structures for THz Applications

4. High-Frequency High-Power Operation of Tunnel Diodes

5. High-Power Operation of Terahertz Oscillators With Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Regulation of negative differential resistance behavior of zigzag GeSe nanoribbon by the doping of N atoms and edge passivation;Ferroelectrics;2023-10-26

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