Extended Methodology to Determine SRAM Write Margin in Resistance-Dominated Technology Node
Author:
Affiliation:
1. IMEC, Leuven, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09758828.pdf?arnumber=9758828
Reference18 articles.
1. Read Stability and Write-Ability Analysis of SRAM Cells for Nanometer Technologies
2. SRAM write margin cell estimation using wordline modulation and read/write operations
3. Analytical modeling of SRAM dynamic stability;zhang;Proc IEEE/ACM Int Conf Comput Aided Design,2006
4. SRAM dynamic stability: Theory, variability and analysis
5. Reexamination of SRAM Cell Write Margin Definitions in View of Predicting the Distribution
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