Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD-Reference-Cited by-同舟云学术

Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

Published:2020-10 Issue:10 Volume:67 Page:2188-2195
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Rezaei Mohammadreza^ORCID,Martin-Holgado Pedro^ORCID,Morilla Yolanda^ORCID,Franco Francisco J.^ORCID,Fabero Juan Carlos^ORCID,Mecha Hortensia^ORCID,Puchner Helmut^ORCID,Hubert Guillaume^ORCID,Clemente Juan Antonio^ORCID

Funder

Spanish Ministry of Economy and Competitiveness

Spanish MINECO at CNA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9228850/09194077.pdf?arnumber=9194077

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Method to Neutralize the Impact of DVS on the Reliability of COTS SRAMs With ECC by Using Periodic Scrubbing;IEEE Transactions on Nuclear Science;2023-12

2. The Effects of Gamma Ray Integrated Dose on a Commercial 65-nm SRAM Device;IEEE Transactions on Nuclear Science;2023-08

3. Analysis of Proton-induced Single Event Effect in the On-Chip Memory of Embedded Process;2022 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT);2022-10-19

4. Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells;Sustainable Computing: Informatics and Systems;2022-09

5. Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs Against Proton Radiation;IEEE Transactions on Nuclear Science;2022-02