A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput-Reference-Cited by-同舟云学术

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Published:2008-01 Issue:1 Volume:43 Page:150-162
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Lee Kwang-Jin,Cho Beak-Hyung,Cho Woo-Yeong,Kang Sangbeom,Choi Byung-Gil,Oh Hyung-Rok,Lee Chang-Soo,Kim Hye-Jin,Park Joon-Min,Wang Qi,Park Mu-Hui,Ro Yu-Hwan,Choi Joon-Yong,Kim Ki-Sung,Kim Young-Ran,Shin In-Cheol,Lim Ki-Won,Cho Ho-Keun,Choi Chang-Han,Chung Won-Ryul,Kim Du-Eung,Yoon Yong-Jin,Yu Kwang-Suk,Jeong Gi-Tae,Jeong Hong-Sik,Kwak Choong-Keun,Kim Chang-Hyun,Kim Kinam

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4443178/04443196.pdf?arnumber=4443196

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