Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents-Reference-Cited by-同舟云学术

Read Disturbance in Cross-Point Phase-Change Memory Arrays—Part II: Array Simulations Considering External Currents

Published:2023-02 Issue:2 Volume:70 Page:521-526
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Donguk¹,Jang Jun Tae¹^ORCID,Kim Changwook¹^ORCID,Kim Hyun Wook²,Hong Eunryeong²^ORCID,Ban Sanghyun³^ORCID,Shin Minchul³,Lee Hanwool³,Lee Hyung Dong³,Mo Hyun-Sun¹,Woo Jiyong²^ORCID,Kim Dae Hwan¹^ORCID

Affiliation:

1. School of Electrical Engineering, Kookmin University, Seoul, South Korea

2. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea

3. SK Hynix, Gyeonggi-do, South Korea

Funder

SK Hynix

National Research Foundation of Korea (NRF) through the Korean Government

Institute of Information and Communications Technology Planning and Evaluation (IITP) through Korea Government

National Research Foundation (NRF) through Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/10003129.pdf?arnumber=10003129

Reference24 articles.

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4. A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

5. Mg-Te OTS selector with low Ioff(< 100 pA), fast switching speed (?d = 7 ns), and high thermal stability (400 °C/30min) for X-point memory applications;lee;Proc Symp VLSI Technol,2021