Match Sensing Using Match-Line Stability in Content-Addressable Memories (CAM)-Reference-Cited by-同舟云学术

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Match Sensing Using Match-Line Stability in Content-Addressable Memories (CAM)

Published:2008-09 Issue:9 Volume:43 Page:1972-1981
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Tyshchenko Oleksiy,Sheikholeslami Ali

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/4625985/04625996.pdf?arnumber=4625996

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio;IEEE Electron Device Letters;2024-05

2. Memristor Crossbar Circuit for Ternary Content‐Addressable Memory with Fine‐Tuning Operation;Advanced Intelligent Systems;2023-01-19

3. A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory;IEEE Transactions on Electron Devices;2021-10

4. A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge;IEEE Journal of Solid-State Circuits;2021-08

5. Low-power content addressable memory design using two-layer P-N match-line control and sensing;Integration;2020-11

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