Pressureless Sintered-Silver as Die Attachment for bonding Si and SiC Chips on Silver, Gold, Copper, and Nickel Metallization for Power Electronics Packaging: The Practice and Science-Reference-Cited by-同舟云学术

Pressureless Sintered-Silver as Die Attachment for bonding Si and SiC Chips on Silver, Gold, Copper, and Nickel Metallization for Power Electronics Packaging: The Practice and Science

Published:2022-04 Issue:2 Volume:10 Page:2645-2655
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Wang Meiyu¹^ORCID,Mei Yunhui²^ORCID,Hu Weibo¹^ORCID,Li Xin³^ORCID,Lu Guo-Quan⁴^ORCID

Affiliation:

1. College of Electronic Information and Optical Engineering, Nankai University, Tianjin, China

2. School of Electrical Engineering, Tiangong University, Tianjin, China

3. School of Materials Science and Engineering, Tianjin University, Tianjin, China

4. The Bradley Department of Electrical and Computer Engineering, and the Department of Materials Science and Engineering, Center for Power Electronics Systems (CPES), Virginia Tech, Blacksburg, VA, USA

Funder

National Natural Science Foundation of China

Tianjin Municipal Science and Technology Bureau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://xplorestaging.ieee.org/ielx7/6245517/9745884/09707763.pdf?arnumber=9707763

Reference50 articles.

1. Effect of oxygen on microstructural coarsening behaviors and mechanical properties of Ag sinter paste during high-temperature storage from macro to micro

2. Failure analysis and reliability evaluation of silver-sintered die attachment for high-temperature applications

3. Temperature dependence of 1.2 kV 4H-SiC Schottky barrier diode for wide temperature applications;qi;Proc IEEE 10th Int Symp Power Electron Distrib Gener Syst (PEDG),2019

4. Analysis of the current-voltage-temperature characteristics of Wl4H-SiC Schottky barrier diodes for high performance temperature sensors

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