Analysis of the current-voltage-temperature characteristics of Wl4H-SiC Schottky barrier diodes for high performance temperature sensors

Author:

Zeghdar K.,Bencherif H.,Dehimi L.,Pezzimenti F.,Della Corte F. G.

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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2. Investigating Electrical Properties and Temperature Sensing Capabilities of Ti /4H-SiC Schottky Barrier Diodes;2024 2nd International Conference on Electrical Engineering and Automatic Control (ICEEAC);2024-05-12

3. Synthesis of the Calibration Algorithm of the Microwave Signal Power Meter;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29

4. Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure;2023 13th International Conference on Power, Energy and Electrical Engineering (CPEEE);2023-02-25

5. Pressureless Sintered-Silver as Die Attachment for bonding Si and SiC Chips on Silver, Gold, Copper, and Nickel Metallization for Power Electronics Packaging: The Practice and Science;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-04

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