Investigating Electrical Properties and Temperature Sensing Capabilities of Ti /4H-SiC Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Investigating Electrical Properties and Temperature Sensing Capabilities of Ti /4H-SiC Schottky Barrier Diodes

Published:2024-05-12 Issue: Volume:1–2 Page:1-6
ISSN:
Container-title:2024 2nd International Conference on Electrical Engineering and Automatic Control (ICEEAC)
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Author:

Zeghdar Kamal¹,Mansouri Siham²,Dehimi Lakhdar³

Affiliation:

1. University of science and technology houari boumediene,Faculty of electrical engineering,Department of Electronics,Algiers,Algeria

2. University Ferhat Abbas Setif 1,Faculty of Technology,Department of Electronics,Algeria

3. University Hadj Lakhdar Batna 1,Faculty of Matter Science,Department of Physics,Algeria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10576196/10576199/10576380.pdf?arnumber=10576380

Reference10 articles.

1. Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics

2. A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

3. High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

4. Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications

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