Author:
Kondrath Nisha,Kazimierczuk Marian
Abstract
Characteristics and Applications of Silicon Carbide Power Devices in Power ElectronicsSilicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.
Reference27 articles.
1. A 1 MHz hard switched silicon carbide DC/DC converter;A. Abou-Alfotouh;IEEE Transactions on Power Electronics,2006
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;M. Bhatnagar;IEEE Transactions on Electronic Devices,1993
3. Growth of single crystal boules of 6H-SiC;C. Carter, Jr.,1987
4. Future navy application of wide bandgap power semiconductor devices;T. Ericsen;Proceedings of the IEEE,2002
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献