Author:
Tsuruma Yuki,Kawashima Emi,Nagasaki Yoshikazu,Sekiya Takashi,Imamura Gaku,Yoshikawa Genki
Abstract
AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.
Publisher
Springer Science and Business Media LLC
Reference33 articles.
1. Baliga, J. Fundamentals of Power Semiconductor Devices (Springer, 2008).
2. Jeon, S. et al. High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices. Symp. VLSI Technol. Dig. 2012, 125–126 (2012).
3. Shenai, K. Switching MegaWatts with power transistors. J. Electrochem. Soc. 22, 47–53 (2013).
4. Kondrath, N. & Kazimierczuk, M. K. Characteristics and applications of silicon carbide power devices in power electronics. INTL J. Electron. Telecommun. 56, 231–236 (2010).
5. Okumura, H. Present status and future prospect of widegap semiconductor high-power devices. Jpn. J. Appl. Phys. 45, 7565–7586 (2006).
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