Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure
Author:
Affiliation:
1. National United University,Dept of Electronic Engineering,Miaoli City,Taiwan
2. National Yang Ming Chiao Tung University,Dept. of Electrophysics,Hsinchu City,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10217214/10217224/10217487.pdf?arnumber=10217487
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4. Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices;ker;IEEE VLSI-TSA International Symposium on VLSI Technology,2005
5. Source of miscorrelation of product level HBM to TLP test results
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