Author:
Cirillo N.C.,Shur M.S.,Vold P.J.,Abrokwah J.K.,Tufte O.N.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
44 articles.
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1. Unified analytical model of HEMTs for analogue and digital applications;IEE Proceedings - Circuits, Devices and Systems;2005
2. DC and noise performance of C-HFET transistors at low drain current densities;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-08
3. DC and noise performance of C-HFET transistors at low drain current densities;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-01
4. Characteristics of GaAs complementary heterojunction FETs (C-HFETs) and C-HFET based amplifiers exposed to high neutron fluences;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-07
5. Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface;Journal of Crystal Growth;1995-05