Characteristics of GaAs complementary heterojunction FETs (C-HFETs) and C-HFET based amplifiers exposed to high neutron fluences
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
2. Radiation and cryogenic test results with a monolithic GaAs preamplifier in C-HFET technology
3. Proc. 2nd Int. Conf. on Calorimetry in High Energy Physics;DiBitonto,1992
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4. Characteristics of GaAs complementary heterojunction FETs and C-HFET-based amplifiers exposed to high proton fluences;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-07
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