Unified analytical model of HEMTs for analogue and digital applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_20045087?crawler=true&mimetype=application/pdf
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1. Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface
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3. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
4. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
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