Author:
Karpinski W.,Lübelsmeyer K.,Pierschel G.,Rente C.,Tenbusch F.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
5 articles.
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1. Toward a very low-power integrated charge preamplifier by using III-V field effect transistors;IEEE Transactions on Nuclear Science;1998-06
2. Characteristics of GaAs complementary heterojunction FETs and C-HFET-based amplifiers exposed to high proton fluences;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-07
3. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-05
4. Radiation hardness of GaAs complementary heterojunction field effect transistors (CHFETs) and CHFET-based monolithic amplifiers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-04
5. Measurements on GaAs strip and pixel detectors in a 50 GeV pion beam;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1997-04