Ohmic Contact With a Contact Resistivity of 12 Ω ⋅ <i>mm</i> on p-GaN/AlGaN/GaN-Reference-Cited by-同舟云学术

Ohmic Contact With a Contact Resistivity of 12 Ω ⋅ mm on p-GaN/AlGaN/GaN

Published:2022-09 Issue:9 Volume:43 Page:1412-1415
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang Chu-Ying¹^ORCID,Lu Hong-Hao²^ORCID,Qiao Ze-Peng²,Jiang Yang²,Du Fang-Zhou²^ORCID,He Jia-Qi²^ORCID,Jiang Yu-Long²^ORCID,Wang Qing²^ORCID,Yu Hong-Yu³

Affiliation:

1. School of Microelectronics, Southern University of Science and Technology, Shenzhen, China

2. Key Laboratory of the Third Generation Semiconductor, Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, GaN Device Engineering Technology Research Center of Guangdong, School of Microelectronics, Southern University of Science and Technology, Shenzhen, China

3. School of Microelectronics, Fudan University, Shanghai, China

Funder

Research on the Fabrication and Mechanism of GaN Power and RF Devices

Research on the GaN Chip for 5G Applications

Research on High-Reliable GaN Power Device and the Related Industrial Power System

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9866921/09834920.pdf?arnumber=9834920

Reference19 articles.

1. First demonstration of a self-aligned GaN p-FET;nadim;IEDM Tech Dig,2019

2. Au: Ga alloyed clusters to enhance Al contacts to P-type GaN;klump;Proc IEEE Res Appl Photon Defense Conf (RAPID),2018

3. GaN/AlN Schottky-gate p-channel HEFTs with InGaN contacts and 100 mA/mm on-current;bader;IEDM Tech Dig,2019

4. Effect of surface treatment by (NH[sub 4])[sub 2]S[sub x] solution on the reduction of ohmic contact resistivity of p-type GaN

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