Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs
Author:
Affiliation:
1. China Resources Microelectronics Ltd., Chongqing, China
2. Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Chongqing
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09911613.pdf?arnumber=9911613
Reference28 articles.
1. Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance
2. Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery
3. Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode
4. Improving the CoolMOSTM body-diode switching performance with integrated Schottky contacts;xu;Proc IEEE 15th Int Symp Power Semiconductor Devices ICs,2003
5. Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study
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1. Superjunction MOSFET with an N-Dot Region in the P-Pillar for Soft Reverse Recovery;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06
3. Experimental Demonstration of a 650-V Superjunction MOSFET With Dual Schottky Contacts for Fast Reverse Recovery;IEEE Transactions on Electron Devices;2024-06
4. Comparison of body diode switching characteristics of 650V power devices;IEICE Electronics Express;2024
5. A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts;2023 2nd Asia Power and Electrical Technology Conference (APET);2023-12-28
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