Comparison of body diode switching characteristics of 650V power devices
Author:
Affiliation:
1. Dept. of Electrical and Electronic Engineering, DAIDO University
2. NAGOYA University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Link
https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_21.20240462/_pdf
Reference33 articles.
1. [1] P. Li, et al.: “Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs,” IEEE Electron Device Letters 43 (2022) (DOI: 10.1109/LED.2022.3212097).
2. [2] X. Tong, et al.: “Influence of forward current freewheeling time on di/dt robustness of SJ-MOSFET body diode,” IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits, (2017) 2145 (DOI: 10.1109/IPFA.2017.8060167).
3. [3] R. Jagannathan, et al.: “Impacts of Package, Layout and Freewheeling Diode on Switching Characteristics of Super Junction MOSFET in Automotive DC-DC Applications,” IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) 2016 (DOI: 10.1109/PEDES.2016.7914257).
4. [4] M. Corad, et al.: “Avoiding reverse recovery effects in super junction MOSFET based half-bridges,” 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) 2015 1 (DOI: 10.1109/PEDG.2015.7223083).
5. [5] W. Saito, et al.: “Influence of Carrier Lifetime Control Process in Superjunction MOSFET Characteristics,” 26th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (2014) 87 (DOI: 10.1109/ISPSD.2014.6855982).
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