Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching
Author:
Affiliation:
1. Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
2. Department of Engineering, University of Cambridge, Cambridge, U.K.
Funder
Power Management Consortium of the Center for Power Electronics Systems at Virginia Tech
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/55/10027614/9970569-aam.pdf
Reference31 articles.
1. High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2. p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
3. Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs
4. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
5. Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress
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