Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing, China
2. China Electronics Technology Group Corporation 13th Research Institute, Shijiazhuang, China
Funder
Research Staff of Atomic Nano-Materials and Equipment Company Ltd.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9811240/09785575.pdf?arnumber=9785575
Reference33 articles.
1. Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
2. High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
3. p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
4. 1.6 kV, 2.9 $\text{m}\Omega$ cm2 normally-off p-GaN HEMT device;hwang;Proc 24th Int Symp Power Semiconductor Devices (ICs),2012
5. Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique
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