Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants-Reference-Cited by-同舟云学术

Engineering Hf_0.5Zr_0.5O₂ Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Published:2022-04 Issue:4 Volume:43 Page:553-556
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhao Zefu¹^ORCID,Chen Yu-Rui¹^ORCID,Wang Jer-Fu¹,Chen Yun-Wen¹,Zou Jia-Ren²,Lin Yuxuan¹,Xing Yifan¹,Liu C. W.³^ORCID,Hu Chenming⁴^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

3. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

4. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education, Taiwan

Center for the Semiconductor Technology Research from the Featured Areas Research Center Program, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9741089/09705546.pdf?arnumber=9705546

Reference30 articles.

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4. Bi-directional sub-60 mV/dec, hysteresis-free, reducing onset voltage and high speed response of ferroelectric-antiferroelectric Hf0.25Zr0.75O2 negative capacitance FETs;lee;IEDM Tech Dig,2019

5. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130 nm CMOS for embedded NVM applications;francois;IEDM Tech Dig,2019

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