Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO<sub>x</sub>/HfZrO Gate Insulator by 2 Step Sequential Ar/O<sub>2</sub> Treatment-Reference-Cited by-同舟云学术

Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO_x/HfZrO Gate Insulator by 2 Step Sequential Ar/O₂ Treatment

Published:2022-05 Issue:5 Volume:43 Page:725-728
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hasan Md Mehedi¹^ORCID,Mohit ²^ORCID,Islam Md Mobaidul¹^ORCID,Bukke Ravindra Naik¹^ORCID,Tokumitsu Eisuke²^ORCID,Chu Hye-Yong³,Kim Sung Chul³,Jang Jin¹^ORCID

Affiliation:

1. Department of Information Display, Kyung Hee University, Seoul, South Korea

2. School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa, Japan

3. Samsung Display Company, Gyeonggi-Do, South Korea

Funder

Ministry of Trade Industry, and Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9762988/09745458.pdf?arnumber=9745458

Reference29 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Solution processed high performance ferroelectric Hf0.5Zr0.5O2 thin film transistor on glass substrate

3. High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

4. Exploring argon plasma effect on ferroelectric Hf0.5Zr0.5O2 thin film atomic layer deposition

5. Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary;kashir;arXiv 2102 03017,2021

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