High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis-Reference-Cited by-同舟云学术

High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

Published:2021-08-30 Issue:9 Volume:119 Page:093502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hasan Md Mehedi¹^ORCID,Mohit ²^ORCID,Bae Jinbaek¹,Tokumitsu Eisuke²,Chu Hye-Yong³,Kim Sung Chul³,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, South Korea

2. School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Nomi, Ishikawa 923-1292, Japan

3. Samsung Display Company, Ltd., Gyeonggi-Do 446-711, South Korea

Funder

Korea Research Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058127

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4. Ferroelectricity in hafnium oxide thin films

5. Review and perspective on ferroelectric HfO2-based thin films for memory applications

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