An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps-Reference-Cited by-同舟云学术

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Published:2023-01 Issue:1 Volume:44 Page:25-28
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yanlin¹^ORCID,Wei Jin¹,Wang Maojun¹^ORCID,Nuo Muqin¹^ORCID,Yang Junjie¹^ORCID,Lin Wei²^ORCID,Zheng Zheyang³^ORCID,Zhang Li³^ORCID,Hua Mengyuan⁴,Yang Xuelin²,Hao Yilong¹,Chen Kevin J.³^ORCID,Shen Bo²

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

2. School of Physics, Peking University, Beijing, China

3. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

4. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10001839/09950512.pdf?arnumber=9950512

Reference37 articles.

1. Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

2. A Trench-Gate High-Conductivity IGBT (HiGT) With Short-Circuit Capability

3. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

4. ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD

5. Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

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