Demonstration of High Performance Flexible In<sub>0.7</sub>Ga<sub>0.3</sub>As MOSFETs Using Liquid Polyimide (LPI) Transfer-Reference-Cited by-同舟云学术

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Demonstration of High Performance Flexible In_0.7Ga_0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer

Published:2022-06 Issue:6 Volume:43 Page:858-861
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Park Saungeun¹,Kim Do-Kywn²,Cho Young-Dae³,Shim Jae-Phil³,Shin Chan-Soo³,Shin Seung Heon⁴^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA

2. Department of Semiconductor Materials and Applications, Seongnam Campus, Korea Polytechnics, Seongnam-si, Republic of Korea

3. Korea Advanced Nano Fab Center (KANC), Suwon-si, Republic ofKorea

4. Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, Anseong-si, Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09766143.pdf?arnumber=9766143

Reference23 articles.

1. High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

2. High electron mobility transistors on plastic flexible substrates

3. Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

4. Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

5. A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08

2. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate;Micromachines;2022-12-25

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