High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications-Reference-Cited by-同舟云学术

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High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications

Published:2013-02 Issue:2 Volume:34 Page:196-198
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Dae-Hyun,Kim Tae-Woo,Hill Richard J. W.,Young Chadwin D.,Kang Chang Yong,Hobbs Chris,Kirsch Paul,del Alamo Jesus A.,Jammy Raj

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06403503.pdf?arnumber=6403503

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1. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications;Photonics Research;2023-08-01

2. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08

3. Demonstration of High Performance Flexible In_0.7Ga_0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer;IEEE Electron Device Letters;2022-06

4. Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al2O3;Vacuum;2021-11

5. High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications;2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS);2019-11

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