High electron mobility transistors on plastic flexible substrates
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3593006
Reference16 articles.
1. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates
2. Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C
3. Silicon for thin-film transistors
4. High mobility of pentacene field-effect transistors with polyimide gate dielectric layers
5. Silicon on insulator material technology
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1. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08
2. Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials;Journal of Materials Chemistry C;2023
3. Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer;IEEE Electron Device Letters;2022-06
4. Application of NiMoNb adhesion layer on plasma-treated polyimide substrate for flexible electronic devices;Thin Solid Films;2014-05
5. Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate;Applied Physics Letters;2011-11-14
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