Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs-Reference-Cited by-同舟云学术

Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs

Published:2022-03 Issue:3 Volume:43 Page:490-493
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Qing¹^ORCID,Pitner Gregory²^ORCID,Gilardi Carlo¹^ORCID,Su Sheng-Kai³,Zhang Zichen⁴,Chen Edward³,Bandaru Prabhakar⁴,Kummel Andrew⁴,Wang Han²,Passlack Matthias²^ORCID,Mitra Subhasish¹^ORCID,Wong H.-S. Philip¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA

2. Corporate Research, Taiwan Semiconductor Manufacturing Company, San Jose, CA, USA

3. Corporate Research, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan

4. Department of Electrical Engineering, University of California at San Diego, San Diego, CA, USA

Funder

National Nanotechnology Coordinated Infrastructure

member companies of the Stanford SystemX Alliance

Defense Advanced Research Projects Agency (DARPA) 3 Dimensional Monolithic System on a Chip (3DSoC) Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9721042/09674921.pdf?arnumber=9674921

Reference18 articles.

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4. VLSI-Compatible Carbon Nanotube Doping Technique with Low Work-Function Metal Oxides

5. Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors

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