Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection-Reference-Cited by-同舟云学术

Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection

Published:2022-09 Issue:9 Volume:43 Page:1495-1498
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

John John Wellington¹^ORCID,Dhyani Veerendra¹^ORCID,Jakhar Alka¹^ORCID,Sandhu Harmanpreet Kaur¹^ORCID,Dewan Sheetal²^ORCID,Ray Samit K.³,Das Samaresh¹^ORCID

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi (IIT Delhi), Delhi, New Delhi, India

2. SIRe, Indian Institute of Technology Delhi (IIT Delhi), Delhi, New Delhi, India

3. Department of Physics, Indian Institute of Technology Kharagpur (IIT Kharagpur), Kharagpur, West Bengal, India

Funder

Ministry of Electronics and Information Technology, Government of India

Ministry of Human Resource and Development, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9866921/09839488.pdf?arnumber=9839488

Reference22 articles.

1. In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

2. In-Plane Phonon Anisotropy and Anharmonicity in Exfoliated Natural Black Arsenic

3. Nanolayered black arsenic–silicon lateral heterojunction photodetector for visible to mid-infrared wavelengths;jakhar;ACS Appl Nano Mater,2020

4. Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

5. Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

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