Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic-Reference-Cited by-同舟云学术

Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic

Published:2018-08-31 Issue:43 Volume:28 Page:1802581
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhong Mianzeng¹²,Xia Qinglin²,Pan Longfei¹,Liu Yuqing¹,Chen Yabin³,Deng Hui-Xiong¹,Li Jingbo¹,Wei Zhongming¹^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures; Institute of Semiconductors; Chinese Academy of Sciences and College of Materials Science and Opto-Electronic Technology; University of Chinese Academy of Sciences; Beijing 100083 China

2. Hunan Key Laboratory of Super-Microstructure and Ultrafast Process; School of Physics and Electronics; Central South University; Changsha 410083 China

3. Department of Materials Science and Engineering; University of California; Berkeley CA 94720 USA

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

Natural Science Foundation of Hu-nan Province of China

Central South University

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link