High Performance CVD Grown Nanolayered PtSe<sub>2</sub>/SOI Heterostructure for Broadband Photodetection-Reference-Cited by-同舟云学术

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High Performance CVD Grown Nanolayered PtSe₂/SOI Heterostructure for Broadband Photodetection

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
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Author:

Khanikar Prabal Dweep¹,Moudgil Akshay¹,Sandhu Harmanpreet Kaur¹,Dewan Sheetal²,Sharma Sumit¹,Lo Shih-Chun³,Namdas Ebinazar B.⁴,Das Samaresh⁵

Affiliation:

1. Centre for Applied Research in Electronics.

2. School of Interdisciplinary Research, Indian Institute of Technology Delhi,India

3. School of Chemistry and Molecular Biosciences, The University of Queensland,Centre for Organic Photonics & Electronics,Brisbane,Australia

4. School of Mathematics and Physics, and Centre for Organic Photonics & Electronics, The University of Queensland,Australia

5. Centre for Applied Research in Electronics IIT Delhi,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231181.pdf?arnumber=10231181

Reference28 articles.

1. Broadband photodetector based on 2D layered PtSe2 / silicon heterojunction at room-temperature

2. Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

3. Ultrafast, Self-Driven, and Air-Stable Photodetectors Based on Multilayer PtSe2/Perovskite Heterojunctions

4. Raman characterization of platinum diselenide thin films;o ‘brien;2D Mater,2016

5. Two-dimensional semiconductors with possible high room temperature mobility

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