Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors-Reference-Cited by-同舟云学术

Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors

Author:

Dewan Sheetal¹,Khanikar Prabal Dweep²³,Mudgal Richa⁴,Singh Avneet⁵,Muduli Pranaba Kishor⁴^ORCID,Singh Rajendra⁴⁶^ORCID,Das Samaresh³⁶^ORCID

Affiliation:

1. School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

2. University of Queensland−IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India

3. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

4. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India

5. Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India

6. Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India

Funder

Indian Institute of Technology Delhi

Ministry of Education, India

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference56 articles.

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