Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
Author:
Affiliation:
1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
2. Process Research and Development Department, Micron Technology Inc., Vimercate, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9741089/09721255.pdf?arnumber=9721255
Reference35 articles.
1. Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays
2. Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part II: Random Telegraph Noise
3. Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
4. Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memories
5. Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
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