Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels-Reference-Cited by-同舟云学术

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Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels

Published:2015-12 Issue: Volume: Page:
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Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Degraeve R.,Clima S.,Putcha V.,Kaczer B.,Roussel Ph.,Linten D.,Groeseneken G.,Arreghini A.,Karner M.,Kernstock C.,Stanojevic Z.,Van den bosch G.,Van Houdt J.,Furnemont A.,Thean A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409636.pdf?arnumber=7409636

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