Understanding the impact of polysilicon percolative conduction on 3D NAND variability
Author:
Affiliation:
1. Synopsys Northern Europe, Ltd,Glasgow,UK,G3 8HB
2. Informazione e Bioingegneria,Politecnico di Milano Dipartimento Elettronica,Milan,Italy,20133
3. Synopsys, Inc,Sunnyvale,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10319472/10319477/10319604.pdf?arnumber=10319604
Reference14 articles.
1. Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash
2. Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs
3. Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise;IEEE Journal of the Electron Devices Society;2024
2. Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage;IEEE Journal of the Electron Devices Society;2024
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