Investigation of Random Telegraph Noise Under Different Programmed Cell V<sub>t</sub> Levels in Charge Trap Based 3D NAND Flash-Reference-Cited by-同舟云学术

Investigation of Random Telegraph Noise Under Different Programmed Cell V_t Levels in Charge Trap Based 3D NAND Flash

Published:2022-06 Issue:6 Volume:43 Page:878-881
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jia Xinlei¹^ORCID,Jin Lei¹,Zhou Wen¹^ORCID,Lu Jianwei²,Amoroso Salvatore M.³^ORCID,Brown Andrew R.³,Lee Ko-Hsin³^ORCID,Asenov Plamen³,Lin Xi-Wei³^ORCID,Liu Hongtao²^ORCID,Zhang An²,Huo Zongliang¹^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Yangtze Memory Technologies Company Ltd, Wuhan, China

3. Synopsys, Inc, Mountain View, CA, USA

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9780621/09765461.pdf?arnumber=9765461

Reference21 articles.

1. Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

2. Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays—Part I: Polysilicon-Induced Variability

3. Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

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