Physical Model and Characteristics of 3D NAND Memory Cell Metastability Issues under High Temperature Stress-Reference-Cited by-同舟云学术

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Physical Model and Characteristics of 3D NAND Memory Cell Metastability Issues under High Temperature Stress

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Memory Workshop (IMW)
language:
Short-container-title:

Author:

Bicksler Andrew¹,Miccoli Carmine¹,Venkatesan Srinath¹

Affiliation:

1. Technology Development Micron Technology, Inc,Boise,Idaho,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145938.pdf?arnumber=10145938

Reference14 articles.

1. Increase of Doping Efficiency During Light Exposure in P-Type Hydrogenated Amorphous Silicon

2. Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon

3. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen;jackson;Phys Rev B,6217

4. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

5. Negative bias temperature instability: What do we understand?

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays;IEEE Journal of the Electron Devices Society;2023

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