Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays
Author:
Affiliation:
1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy
2. Process Research and Development, Micron Technology, Inc., Vimercate, Italy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10268000.pdf?arnumber=10268000
Reference36 articles.
1. Polycrystalline-silicon channel trap induced transient read instability in a 3D NAND flash cell string
2. Threshold-Voltage Instability Due to Damage Recovery in Nanoscale NAND Flash Memories
3. Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
4. Recovery Effects in the Distributed Cycling of Flash Memories
5. Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays
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1. Comprehensive Characterization Method for Modeling Retention Transients in NAND Flash Memory;IEEE Transactions on Electron Devices;2024
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